CHEM&OTHER

Cleaning Solution

INO-C500 (After SAPPHIRE WAFER LAPPING, detergent)

Composition: 2-liquid detergent maximized its detergency through SC-1 (H2O2 +NH4OH) base.

Features: Preventing re-adsorption of the particle and improving organic detergency in SC-1 base.

Cleaning Process

1

1st Cleaning

Wafer : 40p / Chemical : 80 Liter

50℃ 10min

2

1st Rinse

Wafer : 40p

10min of room temperature

3

2nd Cleaning

Wafer : 40p / Chemical : 80 Liter

50℃ 10min

4

2nd Rinse

Wafer : 40p

10min of room temperature

5

3rd Rinse

Wafer : 40p

10min of room temperature

6

Air Dry

Wafer : 40p

Hot-air drying

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