CHEM&OTHER
Cleaning Solution
INO-C500 (After SAPPHIRE WAFER LAPPING, detergent)
Composition: 2-liquid detergent maximized its detergency through SC-1 (H2O2 +NH4OH) base.
Features: Preventing re-adsorption of the particle and improving organic detergency in SC-1 base.
Cleaning Process
1
1st Cleaning
Wafer : 40p / Chemical : 80 Liter
50℃ 10min
2
1st Rinse
Wafer : 40p
10min of room temperature
3
2nd Cleaning
Wafer : 40p / Chemical : 80 Liter
50℃ 10min
4
2nd Rinse
Wafer : 40p
10min of room temperature
5
3rd Rinse
Wafer : 40p
10min of room temperature
6
Air Dry
Wafer : 40p
Hot-air drying